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Институт теоретической физики им. Л.Д. Ландау РАН
L.D. Landau Institute for Theoretical Physics RAS
Landau Days 2017 June, 26-29 Chernogolovka, Russia

Transport in a disordered ν=2/3 fractional quantum Hall junction
Date/Time: 16:50 29-Jun-2017
Abstract:
Electric and thermal transport properties of a ν=2/3 fractional quantum Hall junction are anaylzed. We investigate the evolution of the electric and thermal two-terminal conductances, G(2) and Gth,(2) with system size L and temperature T. This is done both for the case of strong interaction between the 1 and 1/ 3 modes (when the low-temperature physics of the interacting segment of the device is controlled by the vicinity of the strong-disorder Kane-Fisher-Polchinski fixed point) and for relatively weak interaction, for which the disorder is irrelevant at T=0 in the renormalization-group sense. The transport properties in both cases are similar in several respects. In particular, G(2)(L) is close to 4/3 (in units of e2/h) and Gth,(2) to 2 (in units of πT/6) for small L, independently of the interaction strength. For large L the system is in an incoherent regime, with G(2) given by 2/3 and Gth,(2) showing the Ohmic scaling, Gth,(2)1/L, again for any interaction strength. The hallmark of the strong-disorder fixed point is the emergence of an intermediate range of L, in which the electric conductance shows strong mesoscopic fluctuations and the thermal conductance is Gth,(2)=1. The analysis is extended also to a device with floating 1/3 mode, as studied in a recent experiment [A. Grivnin et al, Phys. Rev. Lett. {\bf 113}, 266803 (2014)].



Authors
Protopopov Ivan V. (Presenter)
(no additional information)

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